photoresist

When using the sputtering nickel system, photoresist and nickel Crosslinking became extremely easy-to-be strong enough to produce water.

在搁置溅射镀镍的编制洋，平刻胶与镍交联后变得格外坚硬，极易爆发水纹。

Where the UV light shines through, it chemically weakens the photoresist, leaving a pattern on the surface of the silicon.

在紫外光照射穿透的地方，光刻胶的化学特性会被削弱，使硅晶片表面留下图案。

Here are a few solutions: firstly, plasma kinetic dedust, in a high vacuum conditions, oxygen ions and photoresist or chemical reaction.

这边有几个处置方案：第一，等离子不兴尘法，在一个矮真空境况下，氧离子与平刻胶或化学精神反响。

A small undesired hole in an oxide, opaque region of a mask or reticle, or in a photoresist layer.

氧化物、掩模或标线的不透明区域，或光刻层中不需要的小孔。

Comparing with all the existing sacrificial layer materials, the photoresist being used as sacrificial layers has some advantages.

同现有的牺牲层材料相比，光致抗蚀剂作牺牲层材料具有一些优越性。

Coating compositions of the invention are useful as photoresist overcoat layers, including in immersion lithography processing.

本发明的涂料组合物可用作光致抗蚀剂的覆盖涂层，包括可用在浸渍平版印刷工艺中。

Otherwise, using photoresist as sacrificial layers does not restrict the thickness of structures and the choice of materials.

此外，用光致抗蚀剂作牺牲材料不影响结构的厚度和材料的选择。

A new method with a one wavelength laser for making 3D diffusion objects true color rainbow hologram on the photoresist plate is presented.

提出了一种用单波长激光制作真彩色彩虹全息图的新方法。

aqueous solution as the developer the photoresist can be of negative tone.

用氢氧化钠-乙醇水溶液显影可以得到负性光刻图形；

The defining steps of photoresist layer includes exposure and development and the lugs may be joined through stoving to melt.

限定光致抗蚀剂层的步骤还包括曝光、显影。并可利用烘烤步骤使各凸块溶融化，以接合各凸块。

The invention provides a photosensitive compound having low edge roughness (LER) photoresist pattern.

本发明提供了能形成具有低LER（线边缘粗糙度）的光刻胶图案的感光化合物。

In microelectronics, the process of removing material, on a chip , left exposed by the exposure and development of the photoresist.

在微电子技术中，通过曝光并显影光刻胶除去芯片上的物质露出剩馀部分的工艺。

The said method can obtain certain painting homogeneity and relatively high photoresist utilization.

本发明的方法可在保证一定涂覆均匀度的同时，获得较高的光阻使用率。

Positive Photoresist is rubber particles upward, the same height and diameter of the rubber.

正胶就是胶皮颗粒向上、高度与直径相等的胶皮。

In addition, the distribution of light fields in the photoresist layer is analyzed by finite-difference time-domain method.

另外，本文还利用时域有限差分法分析了光刻胶层内部的光场分布。

As photoresist has the exposal characteristics, two-spectrum method is fit for measuring the thickness of photoresist.

针对光刻胶有曝光的特性，双光谱法更适合于胶厚检测。

Using AZ4620 photoresist throw at plane glass, the measuring thickness of photoresist is benchmark through ellipsometer.

采用AZ4620正型光刻胶甩胶于平面玻璃基片，以椭偏仪测量的结果为基准。

A photoresist pattern can be formed on the dielectric.

在该电介质上形成光致抗蚀剂图案；

This paper introduces a technical method of etching optical dividing disc with 302~# negative type photoresist .

本文介绍了采用302负性光刻胶刻制光学度盘的工艺方法。

Study on Process of Water-soluble Printing Photoresist.

水性印花感光制版材料的研究。